2SC5457 |
Part Number | 2SC5457 |
Manufacturer | Panasonic Semiconductor |
Description | Power Transistors 2SC5457 Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching 6.5±0.1 5.3±0.1 4.35±0.1 Unit: mm 2.3±0.1 0.5±0.1 7.3±0.1 1.8±0.1 s Features 0.8... |
Features |
0.8max 1.0±0.2
1.0±0.1
2.5±0.1
q High-speed switching q High collector to base voltage VCBO q Wide area of safe operation (ASO)
0.93±0.1
0.1±0.05 0.5±0.1
2.3±0.1 4.6±0.1
0.75±0.1
q Satisfactory linearity of foward current transfer ratio hFE
/ s Absolute Maximum Ratings (TC=25˚C)
1
2
3
1:Base 2:Collector 3:Emitter U Type Package
e ) Parameter
Symbol
Ratings
Unit
c type Collector to base voltage
VCBO
500
V
n d tage. ued VCES
500
5.5±0.2 1.8
V
s tin Collector to emitter voltage
le on VCEO
400
V
a elifecyc disc Emitter to base voltage
VEBO
7
V
13.3±0.3
n u t ed, ... |
Document |
2SC5457 Data Sheet
PDF 185.65KB |
Distributor | Stock | Price | Buy |
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No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | 2SC5450 |
Inchange Semiconductor |
Silicon NPN Power Transistor | |
2 | 2SC5450 |
Sanyo Semicon Device |
NPN Triple Diffused Planar Silicon Transistor | |
3 | 2SC5451 |
Sanyo Semicon Device |
NPN Triple Diffused Planar Silicon Transistor | |
4 | 2SC5452 |
Sanyo Semicon Device |
NPN Triple Diffused Planar Silicon Transistor | |
5 | 2SC5453 |
Sanyo Semicon Device |
NPN Triple Diffused Planar Silicon Transistor |