2SC5459 - Toshiba Semiconductor

2SC5459 NPN TRANSISTOR

TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5459 Switching Regulator Applications High-Voltage Switching Applications DC-DC Converter Applications 2SC5459 Unit: mm • High-speed switching: tf = 0.3 μs (max) (IC = 1.2 A) • High collector breakdown voltage: VCEO = 400 V • High DC current gain: hFE = 20 (min) (IC = 0.3 A) Absolute Maximum Ratings (.

Features

ly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). 1 http://store.iiic.cc/ 2007-04-26 Electrical Characteristics (Tc = 25°C) Characteristics Collector cut-off current Emitter cut-off current Collector-base breakdown voltage Collector-emitter breakdown voltage DC cu.