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·High Breakdown Voltage- : VCBO= 1600V (Min) ·High Speed Switching ·High Reliability ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Color TV horizontal deflection output ·Color display horizontal deflection output ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage.
ration Voltage IC= 7A; IB= 1.75A VBE(sat) Base-Emitter Saturation Voltage IC= 7A; IB= 1.75A ICBO Collector Cutoff Current VCB= 800V ; IE= 0 ICES Collector Cutoff Current VCE= 1600V ; RBE= 0 IEBO Emitter Cutoff Current VEB= 4V ; IC= 0 hFE-1 DC Current Gain IC= 1A ; VCE= 5V hFE-2 DC Current Gain IC= 7A ; VCE= 5V 2SC5450 MIN TYP. MAX UNIT 800 V 5.0 V 1.5 V 10 μA 1.0 mA 1.0 mA 15 30 4 7 NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herein is presented only as a guide f.
2SC5450 - Sanyo Semicon Device
Ordering number:EN5955 NPN Triple Diffused Planar Silicon Transistor 2SC5450 Ultrahigh-Definition CRT Display Horizont.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2SC5451 |
Sanyo Semicon Device |
NPN Triple Diffused Planar Silicon Transistor |
|
| 2 | 2SC5452 |
Sanyo Semicon Device |
NPN Triple Diffused Planar Silicon Transistor |
|
| 3 | 2SC5453 |
Sanyo Semicon Device |
NPN Triple Diffused Planar Silicon Transistor |
|
| 4 | 2SC5454 |
NEC |
NPN TRANSISTOR |
|
| 5 | 2SC5455 |
NEC |
NPN TRANSISTOR |
|
| 6 | 2SC5457 |
Panasonic Semiconductor |
NPN Transistor |
|
| 7 | 2SC5457 |
Kexin |
Silicon NPN Transistor |
|
| 8 | 2SC5458 |
Toshiba Semiconductor |
NPN TRANSISTOR |
|
| 9 | 2SC5459 |
Toshiba Semiconductor |
NPN TRANSISTOR |
|
| 10 | 2SC5404 |
Toshiba Semiconductor |
NPN TRANSISTOR |
|
| 11 | 2SC5404 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 12 | 2SC5404 |
INCHANGE |
NPN Transistor |
|