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2SC5450 |
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| Part Number | 2SC5450 |
| Manufacturer | Inchange Semiconductor |
| Description | ·High Breakdown Voltage- : VCBO= 1600V (Min) ·High Speed Switching ·High Reliability ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Color TV horizont... |
| Features |
ration Voltage IC= 7A; IB= 1.75A
VBE(sat) Base-Emitter Saturation Voltage
IC= 7A; IB= 1.75A
ICBO
Collector Cutoff Current
VCB= 800V ; IE= 0
ICES
Collector Cutoff Current
VCE= 1600V ; RBE= 0
IEBO
Emitter Cutoff Current
VEB= 4V ; IC= 0
hFE-1
DC Current Gain
IC= 1A ; VCE= 5V
hFE-2
DC Current Gain
IC= 7A ; VCE= 5V
2SC5450
MIN TYP. MAX UNIT
800
V
5.0
V
1.5
V
10 μA
1.0 mA
1.0 mA
15
30
4
7
NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herein is presented only as a guide f... |
| Document |
 2SC5450 Data Sheet
PDF 216.31KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2SC5450 |
Sanyo Semicon Device |
NPN Triple Diffused Planar Silicon Transistor |
|
| 2 | 2SC5451 |
Sanyo Semicon Device |
NPN Triple Diffused Planar Silicon Transistor |
|
| 3 | 2SC5452 |
Sanyo Semicon Device |
NPN Triple Diffused Planar Silicon Transistor |
|
| 4 | 2SC5453 |
Sanyo Semicon Device |
NPN Triple Diffused Planar Silicon Transistor |
|
| 5 | 2SC5454 |
NEC |
NPN TRANSISTOR |
|