TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5096FT 2SC5096FT VHF~UHF Band Low Noise Amplifier Applications • Low noise figure, high gain. • NF = 1.8dB, |S21e|2 = 7.5dB (f = 2 GHz) Absolute Maximum Ratings (Ta = 25°C) Unit: mm Characteristics Symbol Rating Unit Collector-base voltage Collector-emitter voltage Emitter-base voltage Base curr.
g Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Microwave Characteristics (Ta = 25°C) JEDEC ― JEITA ― TOSHIBA 2-1B1A Weight: 0.0022 g (typ.) Characteristics Transition frequency Insertion gain Noise figure Symbol Test Condition fT ⎪S21e⎪2 (1) ⎪S21e⎪2 (2) NF (1) NF (2) VCE = 6 V, IC = 7 mA VCE = 6 V, IC = 7 mA, f = 1 GHz VCE = 6 V, IC = 7 mA, f = 2 GHz VCE = 6 V, IC = 3 mA, f = 1 GHz VCE = 6 V, IC = 3 mA, f = 2 GHz Min Typ. Max Unit 7 10 ⎯ GHz ⎯ 13 ⎯ dB 4.5 7.5 ⎯ ⎯ 1.4 ⎯ dB ⎯ 1.8 3.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2SC5096 |
Toshiba Semiconductor |
NPN TRANSISTOR | |
2 | 2SC509 |
PCT |
Silicon NPN Transistor | |
3 | 2SC5090 |
Toshiba Semiconductor |
NPN TRANSISTOR | |
4 | 2SC5090 |
Inchange Semiconductor |
Silicon NPN Transistor | |
5 | 2SC5091 |
Toshiba Semiconductor |
NPN TRANSISTOR | |
6 | 2SC5091FT |
Toshiba Semiconductor |
NPN TRANSISTOR | |
7 | 2SC5092 |
Toshiba Semiconductor |
NPN TRANSISTOR | |
8 | 2SC5093 |
Toshiba Semiconductor |
NPN TRANSISTOR | |
9 | 2SC5094 |
Toshiba Semiconductor |
NPN TRANSISTOR | |
10 | 2SC5095 |
Toshiba Semiconductor |
NPN Transistor | |
11 | 2SC5097 |
Toshiba Semiconductor |
NPN TRANSISTOR | |
12 | 2SC5097 |
WEITRON |
NPN 10 GHz RF Wideband Transistor |