2SC5092 - Toshiba Semiconductor

2SC5092 NPN TRANSISTOR

TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5092 2SC5092 VHF~UHF Band Low Noise Amplifier Applications Unit: mm · Low noise figure, high gain. · NF = 1.8dB, |S21e|2 = 9.5dB (f = 2 GHz) Maximum Ratings (Ta = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Base current Collector current Collector po.

Features

cal Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Collector cut-off current Emitter cut-off current DC current gain Output capacitance Reverse transfer capacitance ICBO IEBO VCB = 10 V, IE = 0 VEB = 1 V, IC = 0 hFE (Note 1) VCE = 8 V, IC = 20 mA Cob VCB = 10 V, IE = 0, f = 1 MHz (Note 2) Cre ¾ ¾ 50 ¾ ¾ Note 1: hFE classification R: 50~100, O: 80~160 Note 2: Cre is measured by 3 terminal method with capacitance bridge. Typ. ¾ ¾ Max 1 1 ¾ 160 0.7 0.45 1.1 0.95 Unit mA mA pF pF 1 2003-03-19 Marking 2SC5092 2 2003-03-19 2SC5092 3 2003-03-19 2SC5092 .