TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5093 2SC5093 VHF~UHF Band Low Noise Amplifier Applications Unit: mm · Low noise figure, high gain. · NF = 1.8dB, |S21e|2 = 9.5dB (f = 2 GHz) Maximum Ratings (Ta = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Base current Collector current Collector po.
ical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Collector cut-off current Emitter cut-off current DC current gain Output capacitance Reverse transfer capacitance ICBO VCB = 10 V, IE = 0 IEBO VEB = 1 V, IC = 0 hFE (Note 1) VCE = 8 V, IC = 20 mA Cob VCB = 15 V, IE = 0, f = 1 MHz (Note 2) Cre ¾ ¾ 50 ¾ ¾ Note 1: hFE classification R: 50~100, O: 80~160 Note 2: Cre is measured by 3 terminal method with capacitance bridge. Typ. ¾ ¾ Max 1 1 ¾ 160 0.65 0.45 1.05 0.95 Unit mA mA pF pF 1 2003-03-24 Marking 2SC5093 2 2003-03-24 2SC5093 3 2003-03-24 2SC5.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2SC509 |
PCT |
Silicon NPN Transistor | |
2 | 2SC5090 |
Toshiba Semiconductor |
NPN TRANSISTOR | |
3 | 2SC5090 |
Inchange Semiconductor |
Silicon NPN Transistor | |
4 | 2SC5091 |
Toshiba Semiconductor |
NPN TRANSISTOR | |
5 | 2SC5091FT |
Toshiba Semiconductor |
NPN TRANSISTOR | |
6 | 2SC5092 |
Toshiba Semiconductor |
NPN TRANSISTOR | |
7 | 2SC5094 |
Toshiba Semiconductor |
NPN TRANSISTOR | |
8 | 2SC5095 |
Toshiba Semiconductor |
NPN Transistor | |
9 | 2SC5096 |
Toshiba Semiconductor |
NPN TRANSISTOR | |
10 | 2SC5096FT |
Toshiba Semiconductor |
NPN TRANSISTOR | |
11 | 2SC5097 |
Toshiba Semiconductor |
NPN TRANSISTOR | |
12 | 2SC5097 |
WEITRON |
NPN 10 GHz RF Wideband Transistor |