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TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5090 2SC5090 VHF~UHF Band Low Noise Amplifier Applications Unit: mm · Low noise figure, high gain. · NF = 1.1dB, |S21e|2 = 13dB (f = 1 GHz) Maximum Ratings (Ta = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Base current Collector current Collector pow.
acteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Collector cut-off current Emitter cut-off current DC current gain Output capacitance Reverse transfer capacitance ICBO VCB = 10 V, IE = 0 IEBO VEB = 1 V, IC = 0 hFE (Note 1) VCE = 8 V, IC = 20 mA Cob VCB = 10 V, IE = 0, f = 1 MHz (Note 2) Cre ¾ ¾ 50 ¾ ¾ ¾ 1 mA ¾ 1 mA ¾ 160 0.7 ¾ pF 0.5 0.95 pF Note 1: hFE classification R: 50~100, O: 80~160 Note 2: Cre is measured by 3 terminal method with capacitance bridge. 1 2003-03-19 Marking 2SC5090 2 2003-03-19 2SC5090 3 2003-03-19 2SC5090 S-Parameter ZO.
2SC5090 - Inchange Semiconductor
·High Gain Bandwidth Product fT = 10 GHz TYP. ·High Gain, Low Noise Figure ︱S21e︱2 = 13 dB TYP., NF = 1.1 dB TYP @ f = 1.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2SC509 |
PCT |
Silicon NPN Transistor |
|
| 2 | 2SC5091 |
Toshiba Semiconductor |
NPN TRANSISTOR |
|
| 3 | 2SC5091FT |
Toshiba Semiconductor |
NPN TRANSISTOR |
|
| 4 | 2SC5092 |
Toshiba Semiconductor |
NPN TRANSISTOR |
|
| 5 | 2SC5093 |
Toshiba Semiconductor |
NPN TRANSISTOR |
|
| 6 | 2SC5094 |
Toshiba Semiconductor |
NPN TRANSISTOR |
|
| 7 | 2SC5095 |
Toshiba Semiconductor |
NPN Transistor |
|
| 8 | 2SC5096 |
Toshiba Semiconductor |
NPN TRANSISTOR |
|
| 9 | 2SC5096FT |
Toshiba Semiconductor |
NPN TRANSISTOR |
|
| 10 | 2SC5097 |
Toshiba Semiconductor |
NPN TRANSISTOR |
|
| 11 | 2SC5097 |
WEITRON |
NPN 10 GHz RF Wideband Transistor |
|
| 12 | 2SC5098 |
Toshiba Semiconductor |
NPN TRANSISTOR |
|