2SC5091FT - Toshiba Semiconductor

2SC5091FT NPN TRANSISTOR

TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5091FT 2SC5091FT VHF~UHF Band Low Noise Amplifier Applications • Low noise figure, high gain. • NF = 1.1dB, |S21e|2 = 13dB (f = 1 GHz) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage Collector-emitter voltage Emitter-base voltage Base curr.

Features

ng Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Microwave Characteristics (Ta = 25°C) JEDEC ― JEITA ― TOSHIBA 2-1B1A Weight: 0.0022 g (typ.) Characteristics Transition frequency Insertion gain Noise figure Symbol Test Condition fT ⎪S21e⎪2 (1) ⎪S21e⎪2 (2) NF (1) NF (2) VCE = 8 V, IC = 20 mA VCE = 8 V, IC = 20 mA, f = 1 GHz VCE = 8 V, IC = 20 mA, f = 2 GHz VCE = 8 V, IC = 5 mA, f = 1 GHz VCE = 8 V, IC = 5 mA, f = 2 GHz Min Typ. Max Unit 7 10 ⎯ GHz 10 13 ⎯ dB ⎯7⎯ ⎯ 1.1 2.5 dB ⎯ 1.7 ⎯ Ele.