www.DataSheet.co.kr Power Transistors 2SC3868 Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching 0.7±0.1 10.0±0.2 5.5±0.2 2.7±0.2 4.2±0.2 Unit: mm 4.2±0.2 s Features q q q q High-speed switching High collector to base voltage VCBO Wide area of safe operation (ASO) Full-pack package which can be installed to the heat.
q q q q
High-speed switching High collector to base voltage VCBO Wide area of safe operation (ASO) Full-pack package which can be installed to the heat sink with one screw (TC=25˚C)
Ratings 500 500 400 7 3 1.5 0.5 25 2 150
–55 to +150 Unit V V V V A A A W ˚C ˚C
7.5±0.2
16.7±0.3
φ3.1±0.1
4.0
1.4±0.1
1.3±0.2
Solder Dip
s Absolute Maximum Ratings
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Base current Collector power TC=25°C dissipation Ta=25°C Junction temperature Storage temperature Symbol VCBO VCES .
·With TO-220Fa package ·High breakdown voltage ·Wide area of safe operation APPLICATIONS ·For high speed switching appli.
·Collector-Base Breakdown Voltage- : V(BR)CBO= 500V(Min.) ·Low Collector Saturation Voltage ·Wide Area of Safe Operation.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2SC3860 |
Sanyo Semicon Device |
EPITAXIAL PLANAR SILICON TRANSISTORS | |
2 | 2SC3862 |
Toshiba Semiconductor |
Silicon NPN Transistor | |
3 | 2SC3862 |
Inchange Semiconductor |
Silicon NPN Transistor | |
4 | 2SC3863 |
Sanyo Semicon Device |
EPITAXIAL PLANAR SILICON TRANSISTORS | |
5 | 2SC3863 |
Kexin |
NPN Transistors | |
6 | 2SC3864 |
Sanyo |
EPITAXIAL PLANAR SILICON TRANSISTORS | |
7 | 2SC3865 |
ETC |
EPITAXIAL PLANAR SILICON TRANSISTORS | |
8 | 2SC3866 |
SavantIC |
SILICON POWER TRANSISTOR | |
9 | 2SC3866 |
Inchange Semiconductor |
Silicon NPN Power Transistors | |
10 | 2SC3867 |
Hitachi Semiconductor |
Silicon NPN Epitaxial Transistor | |
11 | 2SC3869 |
Panasonic Semiconductor |
Silicon NPN Transistor | |
12 | 2SC380 |
HAOCHANG |
NPN Transistor |