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2SC3868 - Panasonic Semiconductor

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2SC3868 Silicon NPN Transistor

www.DataSheet.co.kr Power Transistors 2SC3868 Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching 0.7±0.1 10.0±0.2 5.5±0.2 2.7±0.2 4.2±0.2 Unit: mm 4.2±0.2 s Features q q q q High-speed switching High collector to base voltage VCBO Wide area of safe operation (ASO) Full-pack package which can be installed to the heat.

Features

q q q q High-speed switching High collector to base voltage VCBO Wide area of safe operation (ASO) Full-pack package which can be installed to the heat sink with one screw (TC=25˚C) Ratings 500 500 400 7 3 1.5 0.5 25 2 150
  –55 to +150 Unit V V V V A A A W ˚C ˚C 7.5±0.2 16.7±0.3 φ3.1±0.1 4.0 1.4±0.1 1.3±0.2 Solder Dip s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Base current Collector power TC=25°C dissipation Ta=25°C Junction temperature Storage temperature Symbol VCBO VCES .

The same part from a different manufacturer

Datasheet 2SC3868 - SavantIC 2SC3868

·With TO-220Fa package ·High breakdown voltage ·Wide area of safe operation APPLICATIONS ·For high speed switching appli.

Datasheet 2SC3868 - INCHANGE 2SC3868

·Collector-Base Breakdown Voltage- : V(BR)CBO= 500V(Min.) ·Low Collector Saturation Voltage ·Wide Area of Safe Operation.

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