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2SC3868 |
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| Part Number | 2SC3868 |
| Manufacturer | INCHANGE |
| Description | ·Collector-Base Breakdown Voltage- : V(BR)CBO= 500V(Min.) ·Low Collector Saturation Voltage ·Wide Area of Safe Operation ·High Speed Switching ·Minimum Lot-to-Lot variations for robust device performa... |
| Features |
herwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA; IB= 0
400
V
VCE(sat) Collector-Emitter Saturation Voltage IC= 0.8A; IB= 0.16A
1.0
V
VBE(sat) Base-Emitter Saturation Voltage
IC= 0.8A; IB= 0.16A
1.5
V
ICBO
Collector Cutoff Current
VCB= 500V; IE= 0
100 μA
IEBO
Emitter Cutoff Current
VEB= 5V; IC= 0
100 μA
hFE-1
DC Current Gain
IC= 0.1A; VCE= 5V
15
hFE-2
DC Current Gain
IC= 0.8A; VCE= 5V
8
fT
Current-Gain—Bandwidth Product
IC= 0.2A; VCE= 10V; f= 1MHz
25
MHz
Switching Times
ton
Turn-on Time
... |
| Document |
 2SC3868 Data Sheet
PDF 207.99KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2SC3860 |
Sanyo Semicon Device |
EPITAXIAL PLANAR SILICON TRANSISTORS |
|
| 2 | 2SC3862 |
Toshiba Semiconductor |
Silicon NPN Transistor |
|
| 3 | 2SC3862 |
Inchange Semiconductor |
Silicon NPN Transistor |
|
| 4 | 2SC3863 |
Sanyo Semicon Device |
EPITAXIAL PLANAR SILICON TRANSISTORS |
|
| 5 | 2SC3863 |
Kexin |
NPN Transistors |
|