2SC3867 - Hitachi Semiconductor

2SC3867 Silicon NPN Epitaxial Transistor

2SC3867 Silicon NPN Epitaxial Application • UHF frequency converter • Wide band amplifier Outline MPAK 3 1 2 1. Base 2. Emitter 3. Collector 2SC3867 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperatur.

Features

t conditions I C = 10 µA, IE = 0 I C = 1 mA, RBE = ∞ I E = 10 µA, IC = 0 VCB = 15 V, IE = 0 I C = 10 mA, IB = 5 mA VCE = 10 V, IC = 5 mA VCE = 10 V, IC = 10 mA VCB = 10 V, IE = 0, f = 1 MHz VCC = 10 V, IC = 1 mA, f = 900 MHz, f osc = 930 MHz, (
  –5dBm), fout = 30 MHz 2 2SC3867 Maximum Collector Dissipation Curve Collector Power Dissipation PC (mW) 150 DC Current Transfer Ratio hFE DC Current Transfer Ratio vs.Collector Current 200 VCE = 10 V 160 100 120 80 50 40 0 0 50 100 150 Ambient Temperature Ta (°C) 1 2 5 10 20 Collector Current IC (mA) 50 Collector Output Capacitance Cob (pF) Gai.