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www.DataSheet.co.kr Power Transistors 2SC3869 Silicon NPN triple diffusion planar type For high-speed switching 0.7±0.1 10.0±0.2 5.5±0.2 2.7±0.2 4.2±0.2 Unit: mm 4.2±0.2 s Features q q q q q High-speed switching High collector to base voltage VCBO Wide area of safe operation (ASO) Satisfactory linearity of foward current transfer ratio hFE Full-pack pac.
q q q q q
High-speed switching High collector to base voltage VCBO Wide area of safe operation (ASO) Satisfactory linearity of foward current transfer ratio hFE Full-pack package which can be installed to the heat sink with one screw (TC=25˚C)
Ratings 500 500 400 7 10 5 1.5 35 2 150
–55 to +150 Unit V V V V A A A W ˚C ˚C
7.5±0.2
16.7±0.3
φ3.1±0.1
4.0
1.4±0.1
1.3±0.2
14.0±0.5
Solder Dip
s Absolute Maximum Ratings
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Base current Collector power TC=25°C dissipa.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2SC3860 |
Sanyo Semicon Device |
EPITAXIAL PLANAR SILICON TRANSISTORS |
|
| 2 | 2SC3862 |
Toshiba Semiconductor |
Silicon NPN Transistor |
|
| 3 | 2SC3862 |
Inchange Semiconductor |
Silicon NPN Transistor |
|
| 4 | 2SC3863 |
Sanyo Semicon Device |
EPITAXIAL PLANAR SILICON TRANSISTORS |
|
| 5 | 2SC3863 |
Kexin |
NPN Transistors |
|
| 6 | 2SC3864 |
Sanyo |
EPITAXIAL PLANAR SILICON TRANSISTORS |
|
| 7 | 2SC3865 |
ETC |
EPITAXIAL PLANAR SILICON TRANSISTORS |
|
| 8 | 2SC3866 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 9 | 2SC3866 |
Inchange Semiconductor |
Silicon NPN Power Transistors |
|
| 10 | 2SC3867 |
Hitachi Semiconductor |
Silicon NPN Epitaxial Transistor |
|
| 11 | 2SC3868 |
INCHANGE |
NPN Transistor |
|
| 12 | 2SC3868 |
SavantIC |
SILICON POWER TRANSISTOR |
|