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2SC3868 |
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| Part Number | 2SC3868 |
| Manufacturer | Panasonic Semiconductor |
| Description | www.DataSheet.co.kr Power Transistors 2SC3868 Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching 0.7±0.1 10.0±0.2 5.5±0.2 2.7±0.2 4.2±0.2 Unit: mm 4.2±0.2 s F... |
| Features |
q q q q
High-speed switching High collector to base voltage VCBO Wide area of safe operation (ASO) Full-pack package which can be installed to the heat sink with one screw (TC=25˚C)
Ratings 500 500 400 7 3 1.5 0.5 25 2 150 –55 to +150 Unit V V V V A A A W ˚C ˚C 7.5±0.2 16.7±0.3 φ3.1±0.1 4.0 1.4±0.1 1.3±0.2 Solder Dip s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Base current Collector power TC=25°C dissipation Ta=25°C Junction temperature Storage temperature Symbol VCBO VCES ... |
| Document |
 2SC3868 Data Sheet
PDF 102.61KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2SC3860 |
Sanyo Semicon Device |
EPITAXIAL PLANAR SILICON TRANSISTORS |
|
| 2 | 2SC3862 |
Toshiba Semiconductor |
Silicon NPN Transistor |
|
| 3 | 2SC3862 |
Inchange Semiconductor |
Silicon NPN Transistor |
|
| 4 | 2SC3863 |
Sanyo Semicon Device |
EPITAXIAL PLANAR SILICON TRANSISTORS |
|
| 5 | 2SC3863 |
Kexin |
NPN Transistors |
|