·With TO-220Fa package ·High collector breakdown voltage ·Excellent switching times APPLICATIONS ·Switching regulator and high voltage switching applications ·High speed DC-DC converter applications PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-220Fa) and symbol DESCRIPTION Absolute maximum ratings (Ta=25 ) SYMBOL VCBO VCEO VEBO IC I.
eakdown voltage Collector-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain CONDITIONS IC=10mA; IB=0 IC=1mA; IE=0 IC=4 A;IB=0.8 A IC=4 A;IB=0.8 A VCB=400V ;IE=0 VEB=7V ;IC=0 IC=1A ; VCE=5V IC=4A ; VCE=5V 15 10 MIN 400 500 2SC3626 SYMBOL V(BR)CEO V(BR)CBO VCEsat VBEsat ICBO IEBO hFE-1 hFE-2 TYP. MAX UNIT V V 1.0 1.5 100 1 V V µA mA Switching times tr ts tf Rise time Storage time Fall time VCC<200V,RL=50? IC=4A ;IB1=-IB2=0.4 A 1.0 2.5 1.0 µs µs µs 2 SavantIC Semic.
·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 400V(Min) ·High Switching Speed ·Minimum Lot-to-Lot variations fo.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2SC3620 |
Toshiba Semiconductor |
Silicon NPN Transistor | |
2 | 2SC3621 |
Toshiba Semiconductor |
NPN Transistor | |
3 | 2SC3621 |
INCHANGE |
NPN Transistor | |
4 | 2SC3622 |
NEC |
NPN SILICON EPITAXIAL TRANSISTOR | |
5 | 2SC3622A |
NEC |
NPN SILICON EPITAXIAL TRANSISTOR | |
6 | 2SC3623 |
NEC |
NPN SILICON TRANSISTOR | |
7 | 2SC3623A |
NEC |
NPN SILICON TRANSISTOR | |
8 | 2SC3624 |
NEC |
AUDIO FREQUENCY AMPLIFIER / SWITCHING NPN SILICON EPITAXIAL TRANSISTOR | |
9 | 2SC3624 |
Kexin |
Transistor | |
10 | 2SC3624A |
NEC |
AUDIO FREQUENCY AMPLIFIER / SWITCHING NPN SILICON EPITAXIAL TRANSISTOR | |
11 | 2SC3627 |
SavantIC |
SILICON POWER TRANSISTOR | |
12 | 2SC3627 |
Inchange Semiconductor |
Silicon NPN Power Transistors |