SMD Type NPN Silicon Epitaxial Transistor 2SC3624 SOT-23 +0.1 2.9-0.1 +0.1 0.4-0.1 Transistors IC Unit: mm Features +0.1 2.4-0.1 Low VCE(sat): (VCE(sat) = 0.07 V TYP). 1 +0.1 0.95-0.1 +0.1 1.9-0.1 +0.1 1.3-0.1 High DC current Gain: hFE = 1000 to 3200. 2 0.55 0.4 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Rating.
+0.1 2.4-0.1 Low VCE(sat): (VCE(sat) = 0.07 V TYP). 1 +0.1 0.95-0.1 +0.1 1.9-0.1 +0.1 1.3-0.1 High DC current Gain: hFE = 1000 to 3200. 2 0.55 0.4 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current (DC) Total power dissipation Junction temperature Storage temperature range Symbol VCBO VCEO VEBO IC PT Tj Tstg Rating 60 50 12 150 200 150 -55 to +150 Unit V V V mA mW Electrical Characteristics Ta = 25 Parameter Collector cutoff current Em.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2SC3620 |
Toshiba Semiconductor |
Silicon NPN Transistor | |
2 | 2SC3621 |
Toshiba Semiconductor |
NPN Transistor | |
3 | 2SC3621 |
INCHANGE |
NPN Transistor | |
4 | 2SC3622 |
NEC |
NPN SILICON EPITAXIAL TRANSISTOR | |
5 | 2SC3622A |
NEC |
NPN SILICON EPITAXIAL TRANSISTOR | |
6 | 2SC3623 |
NEC |
NPN SILICON TRANSISTOR | |
7 | 2SC3623A |
NEC |
NPN SILICON TRANSISTOR | |
8 | 2SC3624A |
NEC |
AUDIO FREQUENCY AMPLIFIER / SWITCHING NPN SILICON EPITAXIAL TRANSISTOR | |
9 | 2SC3626 |
SavantIC |
SILICON POWER TRANSISTOR | |
10 | 2SC3626 |
Inchange Semiconductor |
Silicon NPN Power Transistors | |
11 | 2SC3627 |
SavantIC |
SILICON POWER TRANSISTOR | |
12 | 2SC3627 |
Inchange Semiconductor |
Silicon NPN Power Transistors |