·Low Collector Saturation Voltage ·High breakdown voltage ·Complementary to 2SA1408 ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Color TV vert.deflection output application ·Color TV class B sound output application ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT .
V(BR)CEO Collector-emitter breakdown voltage IC=10mA ; IB=0 V(BR)EBO Emitter-base breakdown voltage IE=1mA ; IC=0 VCE(sat) Collector-Emitter Saturation Voltage IC=500mA; IB= 50mA VBE(ON) Base-Emitter On Voltage IC= 5mA ; VCE= 5V ICBO Collector Cutoff Current VCB= 150V ; IE= 0 IEBO Emitter Cutoff Current VEB= 6V; IC= 0 hFE DC Current Gain IC= 200mA ; VCE= 5V fT Current-Gain—Bandwidth Product IE= 200mA; VCE= 5V COB Output Capacitance IE= 0 ; VCB= 10V,ftest= 1MHz MIN TYP. MAX UNIT 150 V 150 V 6 V 1.5 V 0.8 V 1.0 μA 1.0 μA 60 200 20 100 MHz 13 pF hFE Cla.
2SC3621 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SC3621 Color TV Vertitcal Deflection Output Applic.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2SC3620 |
Toshiba Semiconductor |
Silicon NPN Transistor | |
2 | 2SC3622 |
NEC |
NPN SILICON EPITAXIAL TRANSISTOR | |
3 | 2SC3622A |
NEC |
NPN SILICON EPITAXIAL TRANSISTOR | |
4 | 2SC3623 |
NEC |
NPN SILICON TRANSISTOR | |
5 | 2SC3623A |
NEC |
NPN SILICON TRANSISTOR | |
6 | 2SC3624 |
NEC |
AUDIO FREQUENCY AMPLIFIER / SWITCHING NPN SILICON EPITAXIAL TRANSISTOR | |
7 | 2SC3624 |
Kexin |
Transistor | |
8 | 2SC3624A |
NEC |
AUDIO FREQUENCY AMPLIFIER / SWITCHING NPN SILICON EPITAXIAL TRANSISTOR | |
9 | 2SC3626 |
SavantIC |
SILICON POWER TRANSISTOR | |
10 | 2SC3626 |
Inchange Semiconductor |
Silicon NPN Power Transistors | |
11 | 2SC3627 |
SavantIC |
SILICON POWER TRANSISTOR | |
12 | 2SC3627 |
Inchange Semiconductor |
Silicon NPN Power Transistors |