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PACKAGE DRAWING (UNIT: mm)
• High hFE: hFE = 1000 to 3200 @VCE = 5.0 V, IC = 1.0 mA VCE(sat) = 0.07 V TYP. @IC/IB = 50 mA/5.0 mA
• Low VCE(sat):
• High VEBO: VEBO: 12 V (2SC3622) VEBO: 15 V (2SC3622A)
ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current (DC) Total power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC(DC) PT Tj Tstg 12 150 250 150 −55 to +150 Ratings 2SC3622 2SC3622A 60 50 15 Unit V V V mA mW °C °C
ELECTRICAL CHARACTERISTICS (Ta = 25°.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2SC3622 |
NEC |
NPN SILICON EPITAXIAL TRANSISTOR | |
2 | 2SC3620 |
Toshiba Semiconductor |
Silicon NPN Transistor | |
3 | 2SC3621 |
Toshiba Semiconductor |
NPN Transistor | |
4 | 2SC3621 |
INCHANGE |
NPN Transistor | |
5 | 2SC3623 |
NEC |
NPN SILICON TRANSISTOR | |
6 | 2SC3623A |
NEC |
NPN SILICON TRANSISTOR | |
7 | 2SC3624 |
NEC |
AUDIO FREQUENCY AMPLIFIER / SWITCHING NPN SILICON EPITAXIAL TRANSISTOR | |
8 | 2SC3624 |
Kexin |
Transistor | |
9 | 2SC3624A |
NEC |
AUDIO FREQUENCY AMPLIFIER / SWITCHING NPN SILICON EPITAXIAL TRANSISTOR | |
10 | 2SC3626 |
SavantIC |
SILICON POWER TRANSISTOR | |
11 | 2SC3626 |
Inchange Semiconductor |
Silicon NPN Power Transistors | |
12 | 2SC3627 |
SavantIC |
SILICON POWER TRANSISTOR |