of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. The incorporation of these circuits, software and information in the design of customer's equipment shall be done under the full responsibility of customer. NEC assumes no responsibility for.
• High hFE:
hFE = 1000 to 3200 @VCE = 5.0 V, IC = 1.0 mA
• Low VCE(sat):
VCE(sat) = 0.07 V TYP. @IC/IB = 50 mA/5.0 mA
• High VEBO:
VEBO: 12 V (2SC3623) VEBO: 15 V (2SC3623A)
ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)
Parameter
Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current (DC) Total power dissipation Junction temperature Storage temperature
Symbol
VCBO VCEO VEBO IC(DC) PT
Tj Tstg
Ratings 2SC3623 2SC3623A
60 50 12 15 150 250 150 −55 to +150
Unit
V V V mA mW °C °C
PACKAGE DRAWING (UNIT: mm)
Electrode connection 1. Emitter (E) 2. Collector (C) 3..
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2SC3620 |
Toshiba Semiconductor |
Silicon NPN Transistor | |
2 | 2SC3621 |
Toshiba Semiconductor |
NPN Transistor | |
3 | 2SC3621 |
INCHANGE |
NPN Transistor | |
4 | 2SC3622 |
NEC |
NPN SILICON EPITAXIAL TRANSISTOR | |
5 | 2SC3622A |
NEC |
NPN SILICON EPITAXIAL TRANSISTOR | |
6 | 2SC3623A |
NEC |
NPN SILICON TRANSISTOR | |
7 | 2SC3624 |
NEC |
AUDIO FREQUENCY AMPLIFIER / SWITCHING NPN SILICON EPITAXIAL TRANSISTOR | |
8 | 2SC3624 |
Kexin |
Transistor | |
9 | 2SC3624A |
NEC |
AUDIO FREQUENCY AMPLIFIER / SWITCHING NPN SILICON EPITAXIAL TRANSISTOR | |
10 | 2SC3626 |
SavantIC |
SILICON POWER TRANSISTOR | |
11 | 2SC3626 |
Inchange Semiconductor |
Silicon NPN Power Transistors | |
12 | 2SC3627 |
SavantIC |
SILICON POWER TRANSISTOR |