2SC3583 - Inchange Semiconductor

2SC3583 Silicon NPN RF Transistor

·Low Noise and High Gain NF = 1.2 dB TYP., Ga = 11 dB TYP. @VCE = 8 V, IC = 7 mA, f = 1.0 GHz ·High Power Gain MAG = 15dB TYP. @VCE = 8V, IC = 20 mA, f = 1.0 GHz ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for low noise amplifier at VHF, UHF and CATV band. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMB.

Features

; IC= 0 hFE DC Current Gain IC= 20mA ; VCE= 10V fT Current-Gain—Bandwidth Product IC= 20mA ; VCE= 8V Cre Feed-Back Capacitance ︱S21e︱2 Insertion Power Gain IE= 0 ; VCB= 10V;f= 1.0MHz IC= 20mA ; VCE= 8V;f= 1.0GHz MAG Maximum Available Gain IC= 20mA ; VCE= 8V;f= 1.0GHz NF Noise Figure IC= 7mA ; VCE= 8V;f= 1.0GHz  hFE Classification Class Q R S Marking R23 R24 R25 hFE 50-100 80-160 125-250 2SC3583 MIN TYP. MAX UNIT 1.0 μA 1.0 μA 50 250 9 GHz 0.35 0.9 pF 11 13 dB 15 dB 1.2 2.5 dB isc website：www.iscsemi.cn 2 isc & iscsemi is registered trademark isc Silic.