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2SC3583 |
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| Part Number | 2SC3583 |
| Manufacturer | NEC |
| Description | The 2SC3583 is an NPN epitaxial silicon transistor designed for use in low-noise and small signal amplifiers from VHF band to UHF band. Lownoise figure, high gain, and high current capability achieve ... |
| Features |
• NF • Ga 1.2 dB TYP. 13 dB TYP. @f = 1.0 GHz @f = 1.0 GHz 2.9±0.2 2 ABSOLUTE MAXIMUM RATINGS (TA = 25 C) Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature VCBO VCEO VEBO IC PT Tj Tstg 20 10 1.5 65 200 150 65 to +150 V V V mA mW C C 0.3 Marking 1.1 to 1.4 PIN CONNECTIONS 1. Emitter 2. Base 3. Collector ELECTRICAL CHARACTERISTICS (TA = 25 C) CHARACTERISTIC Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain Bandwidth Product Feed-Back Capacitance Insertion ... |
| Document |
 2SC3583 Data Sheet
PDF 103.74KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2SC3580 |
Isahaya Electronics |
SMALL-SIGNAL TRANSISTOR |
|
| 2 | 2SC3581 |
Isahaya Electronics Corporation |
SMALL-SIGNAL TRANSISTOR |
|
| 3 | 2SC3582 |
NEC |
NPN Silicon Transistor |
|
| 4 | 2SC3582 |
Inchange Semiconductor |
Silicon NPN RF Transistor |
|
| 5 | 2SC3583 |
UTC |
NPN EPITAXIAL SILICON TRANSISTOR |
|