Recherchez avec le numéro de pièce ainsi que le fabricant ou la description
The 2SC3582 is an NPN epitaxial silicon transistor designed for use in low-noise and small signal amplifiers from VHF band to UHF band. Lownoise figure, high gain, and high current capability achieve a very wide dynamic range and excellent linearity. This is achieved by direct nitride passivated base surface process (DNP process) which is an NEC proprietary .
• NF
• Ga 1.2 dB TYP. 12 dB TYP. @f = 1.0 GHz @f = 1.0 GHz
0.5 (0.02)
1.77 MAX. (0.069 MAX.)
ABSOLUTE MAXIMUM RATINGS (TA = 25 C)
Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature VCBO VCEO VEBO IC PT Tj Tstg
65
20 10 1.5 65 600 150 to +150
V V V mA mW
C C
1.27 (0.05)
2.54 (0.1)
1
2
3
1. Base 2. Emitter 3. Collector
EIAJ : SC-43B JEDEC : TO-92 IEC : PA33
ELECTRICAL CHARACTERISTICS (TA = 25 C)
CHARACTERISTIC Collector Cutoff Current Emitter Cutoff Current DC Current Ga.
2SC3582 - Inchange Semiconductor
·Low Noise Figure, High Gain, and High Current Capability Achieve a Very Wide Dynamic Range and Excellent Linearity. ·Lo.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2SC3580 |
Isahaya Electronics |
SMALL-SIGNAL TRANSISTOR |
|
| 2 | 2SC3581 |
Isahaya Electronics Corporation |
SMALL-SIGNAL TRANSISTOR |
|
| 3 | 2SC3583 |
NEC |
NPN Silicon Transistor |
|
| 4 | 2SC3583 |
UTC |
NPN EPITAXIAL SILICON TRANSISTOR |
|
| 5 | 2SC3583 |
Inchange Semiconductor |
Silicon NPN RF Transistor |
|
| 6 | 2SC3583 |
Kexin |
NPN Silicon Epitaxial Transistor |
|
| 7 | 2SC3583 |
CEL |
NPN Silicon Transistor |
|
| 8 | 2SC3585 |
NEC |
NPN Transistor |
|
| 9 | 2SC3585 |
Inchange Semiconductor |
Silicon NPN Transistor |
|
| 10 | 2SC3585 |
Kexin |
NPN Transistor |
|
| 11 | 2SC3587 |
NEC |
NPN EPITAXIAL SILICON TRANSISTOR |
|
| 12 | 2SC3588 |
INCHANGE |
NPN Transistor |
|