DATA SHEET SILICON TRANSISTOR 2SC3587 NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE LOW-NOISE AMPLIFICATION The 2SC3587 is an NPN epitaxial transistor designed for lownoise amplification at 0.5 to 6.0 GHz. This transistor has low-noise and high-gain characteristics in a wide collector current region, and has a wide dynamic range. PACKAGE DIMENSIONS (in .
• Low noise : NF = 1.7 dB TYP. @ f = 2 GHz
C
3.8 MIN.
3.8 MIN. B
NF = 2.6 dB TYP. @ f = 4 GHz
• High power gain : GA = 12.5 dB TYP. @ f = 2 GHz GA = 8.0 dB TYP. @ f = 4 GHz
3.8 MIN.
45 °
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)
PARAMETER Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature SYMBOL VCBO VCEO VEBO IC PT (TC = 25 °C) Tj Tstg RATING 20 10 1.5 35 580 200 -65 to +150 UNIT V V V mA mW °C °C
PIN CONNECTIONS E: Emitter C: Collector 0.5 ± 0.05 B: Base 2.55 ± 0.2
E
φ 2.1
1.8 MAX.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2SC3580 |
Isahaya Electronics |
SMALL-SIGNAL TRANSISTOR | |
2 | 2SC3581 |
Isahaya Electronics Corporation |
SMALL-SIGNAL TRANSISTOR | |
3 | 2SC3582 |
NEC |
NPN Silicon Transistor | |
4 | 2SC3582 |
Inchange Semiconductor |
Silicon NPN RF Transistor | |
5 | 2SC3583 |
NEC |
NPN Silicon Transistor | |
6 | 2SC3583 |
UTC |
NPN EPITAXIAL SILICON TRANSISTOR | |
7 | 2SC3583 |
Inchange Semiconductor |
Silicon NPN RF Transistor | |
8 | 2SC3583 |
Kexin |
NPN Silicon Epitaxial Transistor | |
9 | 2SC3583 |
CEL |
NPN Silicon Transistor | |
10 | 2SC3585 |
NEC |
NPN Transistor | |
11 | 2SC3585 |
Inchange Semiconductor |
Silicon NPN Transistor | |
12 | 2SC3585 |
Kexin |
NPN Transistor |