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2SC3583 |
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| Part Number | 2SC3583 |
| Manufacturer | Inchange Semiconductor |
| Description | ·Low Noise and High Gain NF = 1.2 dB TYP., Ga = 11 dB TYP. @VCE = 8 V, IC = 7 mA, f = 1.0 GHz ·High Power Gain MAG = 15dB TYP. @VCE = 8V, IC = 20 mA, f = 1.0 GHz ·Minimum Lot-to-Lot variations for rob... |
| Features |
; IC= 0
hFE
DC Current Gain
IC= 20mA ; VCE= 10V
fT
Current-Gain—Bandwidth Product IC= 20mA ; VCE= 8V
Cre
Feed-Back Capacitance
︱S21e︱2 Insertion Power Gain
IE= 0 ; VCB= 10V;f= 1.0MHz IC= 20mA ; VCE= 8V;f= 1.0GHz
MAG Maximum Available Gain
IC= 20mA ; VCE= 8V;f= 1.0GHz
NF
Noise Figure
IC= 7mA ; VCE= 8V;f= 1.0GHz
hFE Classification Class Q R S Marking R23 R24 R25 hFE 50-100 80-160 125-250 2SC3583 MIN TYP. MAX UNIT 1.0 μA 1.0 μA 50 250 9 GHz 0.35 0.9 pF 11 13 dB 15 dB 1.2 2.5 dB isc website：www.iscsemi.cn 2 isc & iscsemi is registered trademark isc Silic... |
| Document |
 2SC3583 Data Sheet
PDF 406.82KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2SC3580 |
Isahaya Electronics |
SMALL-SIGNAL TRANSISTOR |
|
| 2 | 2SC3581 |
Isahaya Electronics Corporation |
SMALL-SIGNAL TRANSISTOR |
|
| 3 | 2SC3582 |
NEC |
NPN Silicon Transistor |
|
| 4 | 2SC3582 |
Inchange Semiconductor |
Silicon NPN RF Transistor |
|
| 5 | 2SC3583 |
NEC |
NPN Silicon Transistor |
|