Recherchez avec le numéro de pièce ainsi que le fabricant ou la description
: SILICON NPN EPITAXIAL TYPE 2SC3119 UHF TV TUNER RF AMPLIFIER APPLICATIONS. FEATURES . Excellent Forward AGC Characteristics. Unit in mm +a5 2.5 -a3 ci OS -H H + Q25 L5-0.15 T 1 a2 d T~ 1 m a 3 rr 1 HO i MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base C.
. Excellent Forward AGC Characteristics. Unit in mm +a5 2.5 -a3 ci OS -H H + Q25 L5-0.15 T 1 a2 d T~ 1 m a 3 rr 1 HO i MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation Jinction Temperature Storage Temperature Range SYMBOL VcBO VCEO VEBO ic IB PC Tj Tstg ELECTRICAL CHARACTERISTICS (Ta=25°C) CHARACTERISTIC SYMBOL Collector Cut-off Current ICB0 Emitter Cut-off Current lEBO Collector-Emitter Breakdown Voltage DC Current Gain V (BR) CEO hFE Transition.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2SC3110 |
Inchange |
Silicon Power Transistor |
|
| 2 | 2SC3112 |
Toshiba Semiconductor |
TRANSISTOR |
|
| 3 | 2SC3113 |
Toshiba Semiconductor |
Silicon NPN Transistor |
|
| 4 | 2SC3114 |
Sanyo Semicon Device |
PNP/NPN Epitaxial Planar Silicon Transistors |
|
| 5 | 2SC3116 |
Sanyo Semicon Device |
PNP/NPN Epitaxial Planar Silicon Transistors |
|
| 6 | 2SC3117 |
Sanyo Semicon Device |
PNP/NPN Epitaxial Planar Silicon Transistors |
|
| 7 | 2SC3117 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 8 | 2SC3101 |
Mitsubishi Electric Semiconductor |
NPN EPITAXIAL PLANAR TYPE TRANSISTOR |
|
| 9 | 2SC3102 |
Mitsubishi Electric Semiconductor |
NPN EPITAXIAL PLANAR TYPE TRANSISTOR |
|
| 10 | 2SC3103 |
Mitsubishi Electric Semiconductor |
NPN EPITAXIAL PLANAR TYPE TRANSISTOR |
|
| 11 | 2SC3104 |
Mitsubishi Electric Semiconductor |
NPN EPITAXIAL PLANAR TYPE TRANSISTOR |
|
| 12 | 2SC3105 |
Mitsubishi Electric Semiconductor |
NPN EPITAXIAL PLANAR TYPE TRANSISTOR |
|