2SC3113 - Toshiba Semiconductor

2SC3113 Silicon NPN Transistor

TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC3113 2SC3113 For Audio Amplifier and Switching Applications Unit: mm · High DC current gain: hFE = 600~3600 · High breakdown voltage: VCEO = 50 V · High collector current: IC = 150 mA (max) · Small package Maximum Ratings (Ta = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitte.

Features

, IB = 10 mA fT VCE = 10 V, IC = 10 mA Cob NF (1) NF (2) VCB = 10 V, IE = 0, f = 1 MHz VCE = 6 V, IC = 0.1 mA, f = 100 Hz, RG = 10 kW VCE = 6 V, IC = 0.1 mA, f = 1 kHz, RG = 10 kW Note: hFE classification A: 600~1800, B: 1200~3600 Min Typ. Max Unit ¾ ¾ 0.1 mA ¾ ¾ 0.1 mA 600 ¾ 3600 ¾ 0.12 0.25 V 100 250 ¾ MHz ¾ 3.5 ¾ pF ¾ 0.5 ¾ dB ¾ 0.3 ¾ 1 2003-03-25 2SC3113 2 2003-03-25 2SC3113 3 2003-03-25 2SC3113 RESTRICTIONS ON PRODUCT USE 000707EAA
· TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can m.