2SC3112 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC3112 For Audio Amplifier and Switching Applications • • • High DC current gain: hFE = 600~3600 High breakdown voltage: VCEO = 50 V High collector current: IC = 150 mA (max) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emi.
design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Electrical Characteristics (Ta = 25°C) Characteristics Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Transition frequency Collector output capacitance Symbol ICBO IEBO hFE (Note) VCE (sat) fT Cob NF (1) Noise figure NF (2) Test Condition VCB = 50 V, IE = 0 VEB = 5 V, IC = 0 VCE = 6 V, IC = 2.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2SC3110 |
Inchange |
Silicon Power Transistor | |
2 | 2SC3113 |
Toshiba Semiconductor |
Silicon NPN Transistor | |
3 | 2SC3114 |
Sanyo Semicon Device |
PNP/NPN Epitaxial Planar Silicon Transistors | |
4 | 2SC3116 |
Sanyo Semicon Device |
PNP/NPN Epitaxial Planar Silicon Transistors | |
5 | 2SC3117 |
Sanyo Semicon Device |
PNP/NPN Epitaxial Planar Silicon Transistors | |
6 | 2SC3117 |
SavantIC |
SILICON POWER TRANSISTOR | |
7 | 2SC3119 |
Toshiba |
Silicon NPN Transistor | |
8 | 2SC3101 |
Mitsubishi Electric Semiconductor |
NPN EPITAXIAL PLANAR TYPE TRANSISTOR | |
9 | 2SC3102 |
Mitsubishi Electric Semiconductor |
NPN EPITAXIAL PLANAR TYPE TRANSISTOR | |
10 | 2SC3103 |
Mitsubishi Electric Semiconductor |
NPN EPITAXIAL PLANAR TYPE TRANSISTOR | |
11 | 2SC3104 |
Mitsubishi Electric Semiconductor |
NPN EPITAXIAL PLANAR TYPE TRANSISTOR | |
12 | 2SC3105 |
Mitsubishi Electric Semiconductor |
NPN EPITAXIAL PLANAR TYPE TRANSISTOR |