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Ordering number:ENN1032B PNP/NPN Epitaxial Planar Silicon Transistors 2SA1248/2SC3116 160V/700mA Switching Applications Uses · Color TV sound output, converters, inverters. Features · High breakdown voltage. · Large current capacity. · Using MBIT process Package Dimensions unit:mm 2009B [2SA1248/2SC3116] 8.0 4.0 2.7 1.5 3.0 7.0 11.0 1.6 0.8 0.8 0.6.
· High breakdown voltage.
· Large current capacity.
· Using MBIT process
Package Dimensions
unit:mm
2009B
[2SA1248/2SC3116]
8.0 4.0
2.7
1.5 3.0 7.0
11.0
1.6 0.8
0.8
0.6
3.0
0.5
15.5
( ) : 2SA1248
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse)
Collector Dissipation
Symbol
VCBO VCEO VEBO
IC ICP
Pc
Junction Temperature Storage Temperature
Tj Tstg
Electrical Characteristics at Ta = 25˚C
Tc=25˚C
Conditions
Parameter
Symbol
Conditions
Coll.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2SC3110 |
Inchange |
Silicon Power Transistor |
|
| 2 | 2SC3112 |
Toshiba Semiconductor |
TRANSISTOR |
|
| 3 | 2SC3113 |
Toshiba Semiconductor |
Silicon NPN Transistor |
|
| 4 | 2SC3114 |
Sanyo Semicon Device |
PNP/NPN Epitaxial Planar Silicon Transistors |
|
| 5 | 2SC3117 |
Sanyo Semicon Device |
PNP/NPN Epitaxial Planar Silicon Transistors |
|
| 6 | 2SC3117 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 7 | 2SC3119 |
Toshiba |
Silicon NPN Transistor |
|
| 8 | 2SC3101 |
Mitsubishi Electric Semiconductor |
NPN EPITAXIAL PLANAR TYPE TRANSISTOR |
|
| 9 | 2SC3102 |
Mitsubishi Electric Semiconductor |
NPN EPITAXIAL PLANAR TYPE TRANSISTOR |
|
| 10 | 2SC3103 |
Mitsubishi Electric Semiconductor |
NPN EPITAXIAL PLANAR TYPE TRANSISTOR |
|
| 11 | 2SC3104 |
Mitsubishi Electric Semiconductor |
NPN EPITAXIAL PLANAR TYPE TRANSISTOR |
|
| 12 | 2SC3105 |
Mitsubishi Electric Semiconductor |
NPN EPITAXIAL PLANAR TYPE TRANSISTOR |
|