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Ordering number:ENN1047C PNP/NPN Epitaxial Planar Silicon Transistors 2SA1246/2SC3114 High-VEBO, AF Amp Applications www.datasheet4u.com Features · High VEBO. · Wide ASO and highly resistant to breakdown. Package Dimensions unit:mm 2003B [2SA1246/2SC3114] 5.0 4.0 4.0 0.45 0.5 0.6 2.0 0.45 0.44 14.0 1 2 3 5.0 ( ) : 2SA1246 Specifications Absolute Maxi.
· High VEBO.
· Wide ASO and highly resistant to breakdown.
Package Dimensions
unit:mm 2003B
[2SA1246/2SC3114]
5.0 4.0 4.0
0.45 0.5 0.6 2.0 0.45 0.44 14.0 1 2 3
5.0
( ) : 2SA1246
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Conditions
1.3
1.3
1 : Emitter 2 : Collector 3 : Base SANYO : NP
Ratings (
–)60 (
–)50 (
–)15 (
–)150 (
–)300 400 150
–55 to +150.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2SC3110 |
Inchange |
Silicon Power Transistor |
|
| 2 | 2SC3112 |
Toshiba Semiconductor |
TRANSISTOR |
|
| 3 | 2SC3113 |
Toshiba Semiconductor |
Silicon NPN Transistor |
|
| 4 | 2SC3116 |
Sanyo Semicon Device |
PNP/NPN Epitaxial Planar Silicon Transistors |
|
| 5 | 2SC3117 |
Sanyo Semicon Device |
PNP/NPN Epitaxial Planar Silicon Transistors |
|
| 6 | 2SC3117 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 7 | 2SC3119 |
Toshiba |
Silicon NPN Transistor |
|
| 8 | 2SC3101 |
Mitsubishi Electric Semiconductor |
NPN EPITAXIAL PLANAR TYPE TRANSISTOR |
|
| 9 | 2SC3102 |
Mitsubishi Electric Semiconductor |
NPN EPITAXIAL PLANAR TYPE TRANSISTOR |
|
| 10 | 2SC3103 |
Mitsubishi Electric Semiconductor |
NPN EPITAXIAL PLANAR TYPE TRANSISTOR |
|
| 11 | 2SC3104 |
Mitsubishi Electric Semiconductor |
NPN EPITAXIAL PLANAR TYPE TRANSISTOR |
|
| 12 | 2SC3105 |
Mitsubishi Electric Semiconductor |
NPN EPITAXIAL PLANAR TYPE TRANSISTOR |
|