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TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC3072 Strobe Flash Applications Medium Power Amplifier Applications 2SC3072 Unit: mm • High DC current gain : hFE = 140 to 450 (VCE = 2 V, IC = 0.5 A) : hFE = 70 (min) (VCE = 2 V, IC = 4 A) • Low collector saturation voltage : VCE (sat) = 1.0 V (max) (IC = 4 A, IB = 0.1 A) • High power dissipati.
ads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). 1 2010-02-05 Electrical Characteristics.
2SC3072 - Kexin
SMD Type Silicon NPN Epitaxial 2SC3072 TO-252 Transistors Unit: mm 2.30 +0.8 0.50-0.7 +0.1 -0.1 Features High DC curr.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2SC3070 |
Sanyo Semicon Device |
NPN Epitaxial Planar Silicon Transistor |
|
| 2 | 2SC3071 |
Sanyo Semicon Device |
NPN Epitaxial Planar Silicon Transistor |
|
| 3 | 2SC3073 |
Toshiba Semiconductor |
Silicon NPN Transistor |
|
| 4 | 2SC3074 |
Toshiba Semiconductor |
Silicon NPN Transistor |
|
| 5 | 2SC3074 |
INCHANGE |
TO-251 NPN Transistor |
|
| 6 | 2SC3074 |
INCHANGE |
TO-252 NPN Transistor |
|
| 7 | 2SC3074 |
Kexin |
Silicon NPN Transistor |
|
| 8 | 2SC3075 |
Toshiba Semiconductor |
Silicon NPN Transistor |
|
| 9 | 2SC3075 |
Kexin |
NPN Silicon Transistor |
|
| 10 | 2SC3076 |
Toshiba Semiconductor |
Silicon NPN Transistor |
|
| 11 | 2SC3076 |
INCHANGE |
NPN Transistor |
|
| 12 | 2SC3076 |
Kexin |
Silicon NPN Transistor |
|