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2SC3072 |
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| Part Number | 2SC3072 |
| Manufacturer | Toshiba (https://www.toshiba.com/) Semiconductor |
| Description | TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC3072 Strobe Flash Applications Medium Power Amplifier Applications 2SC3072 Unit: mm • High DC current gain : hFE = 140 to 450 (VCE = 2 ... |
| Features |
ads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
1
2010-02-05
Electrical Characteristics... |
| Document |
 2SC3072 Data Sheet
PDF 170.42KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2SC3070 |
Sanyo Semicon Device |
NPN Epitaxial Planar Silicon Transistor |
|
| 2 | 2SC3071 |
Sanyo Semicon Device |
NPN Epitaxial Planar Silicon Transistor |
|
| 3 | 2SC3072 |
Kexin |
Silicon NPN Transistor |
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| 4 | 2SC3073 |
Toshiba Semiconductor |
Silicon NPN Transistor |
|
| 5 | 2SC3074 |
Toshiba Semiconductor |
Silicon NPN Transistor |
|