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: 2SC3073 SILICON NPN EPITAXIAL TYPE (PCT PROCESS) POWER AMPLIFIER APPLICATIONS. CAR RADIO, CAR STEREO OUTPUT STAGE AMPLIFIER APPLICATIONS. FEATURES . Good Linearity of hpE . Complementary to 2SA1243 QS8MAX. Unit in mm -Hi'rJI a 95 MAX. n MAXIMUM RATINGS (Ta=25°C) Q6±Q15 0.6 MAX. CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage Collecto.
. Good Linearity of hpE . Complementary to 2SA1243 QS8MAX. Unit in mm -Hi'rJI a 95 MAX. n MAXIMUM RATINGS (Ta=25°C) Q6±Q15 0.6 MAX. CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation Ta=25°C Tc=25°C VCBO v CEO VEBO ic IB PC 30 V 30 V 5 V 3 A 0.6 A 1.0 W 10 2.3 r^ i u 2 rsl 1. BASE 2. COLLECTOR (PIN) 3. EMITTER Junction Temperature Storage Temperature Range Tj Tstg 150 -55 -150 °c EIAJ °c TOSHIBA ELECTRICAL CHARACTERISTICS (Ta=25°C) Weight : 0.36g .
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2SC3070 |
Sanyo Semicon Device |
NPN Epitaxial Planar Silicon Transistor |
|
| 2 | 2SC3071 |
Sanyo Semicon Device |
NPN Epitaxial Planar Silicon Transistor |
|
| 3 | 2SC3072 |
Toshiba Semiconductor |
Silicon NPN Transistor |
|
| 4 | 2SC3072 |
Kexin |
Silicon NPN Transistor |
|
| 5 | 2SC3074 |
Toshiba Semiconductor |
Silicon NPN Transistor |
|
| 6 | 2SC3074 |
INCHANGE |
TO-251 NPN Transistor |
|
| 7 | 2SC3074 |
INCHANGE |
TO-252 NPN Transistor |
|
| 8 | 2SC3074 |
Kexin |
Silicon NPN Transistor |
|
| 9 | 2SC3075 |
Toshiba Semiconductor |
Silicon NPN Transistor |
|
| 10 | 2SC3075 |
Kexin |
NPN Silicon Transistor |
|
| 11 | 2SC3076 |
Toshiba Semiconductor |
Silicon NPN Transistor |
|
| 12 | 2SC3076 |
INCHANGE |
NPN Transistor |
|