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SMD Type NPN Silicon Epitaxial Transistor 2SC3075 TO-252 +0.15 1.50 -0.15 Transistors Unit: mm +0.1 2.30-0.1 +0.8 0.50-0.7 +0.15 6.50-0.15 +0.2 5.30-0.2 Features Excellent Switching Times +0.2 9.70 -0.2 tr=1.0ìs (Max.) tf=1.5ìs (Max.) at IC=0.5A High colletor Breakdown Voltage: VCEO=400V +0.1 0.80-0.1 +0.15 0.50 -0.15 0.127 max 2.3 +0.15 4.60-0.15 .
Excellent Switching Times +0.2 9.70 -0.2 tr=1.0ìs (Max.) tf=1.5ìs (Max.) at IC=0.5A High colletor Breakdown Voltage: VCEO=400V +0.1 0.80-0.1 +0.15 0.50 -0.15 0.127 max 2.3 +0.15 4.60-0.15 +0.1 0.60-0.1 +0.28 1.50 -0.1 +0.25 2.65 -0.1 +0.15 5.55 -0.15 1 Base 2 Collector 3 Emitter Absolute Maximum Ratings Ta = 25 Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current (DC) Collector current (Pulse) Base Current Total Power dissipation Ta = 25 TC = 25 Junction temperature Storage temperature Tj Tstg Symbol VCBO VCEO VEBO IC Icp IB PC R.
2SC3075 - Toshiba Semiconductor
TOSHIBA Transistor Silicon NPN Triple Diffused Type (PCT process) 2SC3075 2SC3075 Switching Regulator and High Voltage.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2SC3070 |
Sanyo Semicon Device |
NPN Epitaxial Planar Silicon Transistor |
|
| 2 | 2SC3071 |
Sanyo Semicon Device |
NPN Epitaxial Planar Silicon Transistor |
|
| 3 | 2SC3072 |
Toshiba Semiconductor |
Silicon NPN Transistor |
|
| 4 | 2SC3072 |
Kexin |
Silicon NPN Transistor |
|
| 5 | 2SC3073 |
Toshiba Semiconductor |
Silicon NPN Transistor |
|
| 6 | 2SC3074 |
Toshiba Semiconductor |
Silicon NPN Transistor |
|
| 7 | 2SC3074 |
INCHANGE |
TO-251 NPN Transistor |
|
| 8 | 2SC3074 |
INCHANGE |
TO-252 NPN Transistor |
|
| 9 | 2SC3074 |
Kexin |
Silicon NPN Transistor |
|
| 10 | 2SC3076 |
Toshiba Semiconductor |
Silicon NPN Transistor |
|
| 11 | 2SC3076 |
INCHANGE |
NPN Transistor |
|
| 12 | 2SC3076 |
Kexin |
Silicon NPN Transistor |
|