SMD Type Silicon NPN Epitaxial 2SC3076 TO-252 Transistors Unit: mm 2.30 +0.8 0.50-0.7 +0.1 -0.1 Features Low Collectror Saturation Voltage:VCE(sat)=0.5V(Max.)(IC=1A) Excellent Switching Time :tstg=1.0ìs(Typ.) +0.2 9.70 -0.2 +0.15 1.50 -0.15 6.50 +0.2 5.30-0.2 +0.15 -0.15 +0.1 0.80-0.1 +0.15 0.50 -0.15 0.127 max 2.3 +0.15 4.60-0.15 +0.1 0.60-0.1 +.
Low Collectror Saturation Voltage:VCE(sat)=0.5V(Max.)(IC=1A) Excellent Switching Time :tstg=1.0ìs(Typ.) +0.2 9.70 -0.2 +0.15 1.50 -0.15 6.50 +0.2 5.30-0.2 +0.15 -0.15 +0.1 0.80-0.1 +0.15 0.50 -0.15 0.127 max 2.3 +0.15 4.60-0.15 +0.1 0.60-0.1 +0.28 1.50 -0.1 +0.25 2.65 -0.1 +0.15 5.55 -0.15 1 Base 2 Collector 3 Emitter Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base Current Collector power dissipation Ta=25 TC=25 Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC IB PC PC Tj Tstg .
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC3076 Power Amplifier Applications Power Switching Applica.
·Collector-Emitter Saturation Voltage- : VCE(sat)= 0.5V (Max.)@ IC= 1A ·Complementary to 2SA1241 ·100% tested ·Minimum L.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2SC3070 |
Sanyo Semicon Device |
NPN Epitaxial Planar Silicon Transistor | |
2 | 2SC3071 |
Sanyo Semicon Device |
NPN Epitaxial Planar Silicon Transistor | |
3 | 2SC3072 |
Toshiba Semiconductor |
Silicon NPN Transistor | |
4 | 2SC3072 |
Kexin |
Silicon NPN Transistor | |
5 | 2SC3073 |
Toshiba Semiconductor |
Silicon NPN Transistor | |
6 | 2SC3074 |
Toshiba Semiconductor |
Silicon NPN Transistor | |
7 | 2SC3074 |
INCHANGE |
TO-251 NPN Transistor | |
8 | 2SC3074 |
INCHANGE |
TO-252 NPN Transistor | |
9 | 2SC3074 |
Kexin |
Silicon NPN Transistor | |
10 | 2SC3075 |
Toshiba Semiconductor |
Silicon NPN Transistor | |
11 | 2SC3075 |
Kexin |
NPN Silicon Transistor | |
12 | 2SC3077 |
Panasonic |
Silicon NPN Transistor |