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·With TO-3 package ·High breakdown voltage ·Fast switching speed. ·Wide area of safe operation APPLICATIONS ·For switching regulator applications PINNING(see Fig.2) PIN 1 2 3 Base Emitter DESCRIPTION 2SC2914 Fig.1 simplified outline (TO-3) and symbol Collector ABSOLUTE MAXIMUM RATINGS(TC=25 ) SYMBOL VCBO VCEO VEBO IC PC Tj Tstg PARAMETER Collector-base vo.
voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain CONDITIONS IC=5mA ; RBE=7 IC=1mA ; IE=0 IE=1mA ; IC=0 IC=10A; IB=2A IC=10A; IB=2A VCB=400V ;IE=0 VEB=5V; IC=0 IC=5A ; VCE=5V 12 MIN 400 500 7 2SC2914 SYMBOL V(BR)CEO V(BR)CBO V(BR)EBO VCE(sat) VBE(sat) ICBO IEBO hFE TYP. MAX UNIT V V V 1.0 2.0 100 100 V V µA µA 2 SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC2914 Fig.2 outline dimensions (unindicated tolerance:±0.1mm) 3 .
2SC2914 - INCHANGE
·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 400V (Min) ·High Switching Speed ·Minimum Lot-to-Lot variations f.
2SC2914 - Toshiba
: SILICON NPN TRIPLE DIFFUSED TYPE 3 SWITCHING REGULATOR AND HIGH VOLTAGE SWITCHING APPLICATIONS. HIGH SPEED DC-DC CON.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2SC2910 |
Sanyo Semicon Device |
PNP/NPN Epitaxial Planar Silicon Transistors |
|
| 2 | 2SC2911 |
Sanyo Semicon Device |
PNP/NPN Epitaxial Planar Silicon Transistors |
|
| 3 | 2SC2911 |
Inchange Semiconductor |
Silicon NPN Power Transistor |
|
| 4 | 2SC2912 |
Sanyo |
Epitaxial Planar Silicon Transistor |
|
| 5 | 2SC2913 |
INCHANGE |
NPN Transistor |
|
| 6 | 2SC2913 |
Toshiba |
Silicon NPN Transistor |
|
| 7 | 2SC2913 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 8 | 2SC2901 |
NEC |
NPN SILICON TRANSISTOR |
|
| 9 | 2SC2901 |
SEMTECH |
NPN Silicon Epitaxial Planar Transistor |
|
| 10 | 2SC2901 |
Bluecolour |
NPN Silicon Epitaxial Planar Transistor |
|
| 11 | 2SC2901 |
PACO |
NPN Silicon Epitaxial Planar Transistor |
|
| 12 | 2SC2902 |
INCHANGE |
NPN Transistor |
|