: 2SC2913 u SILICON NPN TRIPLE DIFFUSED TYPE SWITCHING REGULATOR AND HIGH VC)LTAGE SWITCHING APPLICATIONS. HIGH SPEED DC-DC CONVERTER APP ^ICATION. FEATURES . Excellent Switching Times INDUSTRIAL APPLICATIONS Unit in mm jzfiaatai >< +U.1Z < ~< m 0141) -0.10 >< < s as : t r =1.0/is(Max.), tf=l. 0/*s (Max. ) at Ic=4A . High Collector Breakdown Vol.
. Excellent Switching Times
INDUSTRIAL APPLICATIONS Unit in mm
jzfiaatai
><
+U.1Z
<
~<
m
0141) -0.10
><
< s
as
: t r =1.0/is(Max.), tf=l. 0/
*s (Max. ) at Ic=4A . High Collector Breakdown Voltage : VCEO=400V
MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation
(Tc=25°C) Junction Temperature Storage Temperature Range
SYMBOL
VcBO v CF,0 v EBO ic
Ifi
pc T
J
T stg
RATING 500 400
7 7 2
40 150
-65-150
UNIT V V V A A
W OC °C
9-fi.o±ao5 ||
24.38±0.05 I4.7±G5
+1
O
C)
^ .
·With TO-66 package ·High breakdown voltage ·Fast switching speed. ·Wide area of safe operation APPLICATIONS ·For switch.
·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 400V (Min) ·High Switching Speed ·Minimum Lot-to-Lot variations f.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2SC2910 |
Sanyo Semicon Device |
PNP/NPN Epitaxial Planar Silicon Transistors | |
2 | 2SC2911 |
Sanyo Semicon Device |
PNP/NPN Epitaxial Planar Silicon Transistors | |
3 | 2SC2911 |
Inchange Semiconductor |
Silicon NPN Power Transistor | |
4 | 2SC2912 |
Sanyo |
Epitaxial Planar Silicon Transistor | |
5 | 2SC2914 |
INCHANGE |
NPN Transistor | |
6 | 2SC2914 |
Toshiba |
Silicon NPN Transistor | |
7 | 2SC2914 |
SavantIC |
SILICON POWER TRANSISTOR | |
8 | 2SC2901 |
NEC |
NPN SILICON TRANSISTOR | |
9 | 2SC2901 |
SEMTECH |
NPN Silicon Epitaxial Planar Transistor | |
10 | 2SC2901 |
Bluecolour |
NPN Silicon Epitaxial Planar Transistor | |
11 | 2SC2901 |
PACO |
NPN Silicon Epitaxial Planar Transistor | |
12 | 2SC2902 |
INCHANGE |
NPN Transistor |