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2SC2901 - SEMTECH

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2SC2901 NPN Silicon Epitaxial Planar Transistor

ST 2SC2901 NPN Silicon Epitaxial Planar Transistor for general purpose amplifier and high speed switching applications. The transistor is subdivided into two groups L and K, according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations. Features ˙ High frequency current gain ˙ High speed switching.

Features

˙ High frequency current gain ˙ High speed switching ˙ Small output capacitance TO-92 Plastic Package Weight approx. 0.19g Absolute Maximum Ratings (T a = 25 OC) Collector Base Voltage Collector Emitter Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Collector Current (10µs pulse) Power Dissipation Junction Temperature Storage Temperature Range Symbol VCBO VCES VCEO VEBO IC IC Ptot Tj TS G S P FORM A IS AVAILABLE Value 40 40 15 5 200 500 600 150 -55 to+150 Unit V V V V mA mA mW OC OC РАДИОТЕХ-ТРЕЙД Тел.: (495) 795-0805 Факс: (495) 234-1603 Эл. почта: [email protected].

The same part from a different manufacturer

Datasheet 2SC2901 - NEC 2SC2901

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Datasheet 2SC2901 - Bluecolour 2SC2901

2SC2901 NPN Silicon Epitaxial Planar Transistor for general purpose amplifier and high speed switching applications. The.

Datasheet 2SC2901 - PACO 2SC2901

ST 2SC2901 NPN Silicon Epitaxial Planar Transistor for general purpose amplifier and high speed switching applications..

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