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·Excellent Safe Operating Area ·Low Collector-Emitter Saturation Voltage ·Complement to Type MJ2955 ·Minimum Lot-to-Lot variations for robust device Performance and reliable operation. APPLICATIONS ·Designed for general-purpose switching and amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltag.
ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC=30mA ; IB=0 VCE(sat) Collector-Emitter Saturation Voltage IC= 7.5A; IB= 2.5A VBE(sat) Base-Emitter Saturation Voltage IC= 7.5A; IB= 2.5A ICEO Collector Cutoff Current VCE= 400V; IB=0 IEBO Emitter Cutoff Current VEB= 9V; IC=0 hFE DC Current Gain IC= 7.5A ; VCE= 5V MIN MAX UNIT 400 V 1.0 V 1.5 V 0.1 mA 0.1 mA 10 35 NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification..
2SC2902 - SavantIC
·With TO-3 package ·High voltage ,high speed APPLICATIONS ·Converters ·Inverters ·Switching regulators ·Motor controls P.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2SC2901 |
NEC |
NPN SILICON TRANSISTOR |
|
| 2 | 2SC2901 |
SEMTECH |
NPN Silicon Epitaxial Planar Transistor |
|
| 3 | 2SC2901 |
Bluecolour |
NPN Silicon Epitaxial Planar Transistor |
|
| 4 | 2SC2901 |
PACO |
NPN Silicon Epitaxial Planar Transistor |
|
| 5 | 2SC2904 |
Mitsubishi Electric Semiconductor |
NPN TRANSISTOR |
|
| 6 | 2SC2904 |
ASI |
NPN SILICON RF POWER TRANSISTOR |
|
| 7 | 2SC2904 |
HGSemi |
Silicon NPN POWER TRANSISTOR |
|
| 8 | 2SC2905 |
Mitsubishi Electric Semiconductor |
NPN TRANSISTOR |
|
| 9 | 2SC2908 |
Mospec Semiconductor |
POWER TRANSISTORS |
|
| 10 | 2SC2908 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 11 | 2SC2909 |
Sanyo Semicon Device |
PNP/NPN Epitaxial Planar Silicon Transistors |
|
| 12 | 2SC2909 |
BLUE ROCKET ELECTRONICS |
Silicon NPN transistor |
|