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Ordering number:ENN779D PNP/NPN Epitaxial Planar Silicon Transistors 2SA1209/2SC2911 160V/140mA High-Voltage Switching and AF 100W Predriver Applications Features · Adoption of FBET process. · High breakdown voltage. · Good linearity of hFE and small Cob. · Fast switching speed. Package Dimensions unit:mm 2009B [2SA1209/2SC2911] 8.0 4.0 2.7 1.5 3.0 .
· Adoption of FBET process.
· High breakdown voltage.
· Good linearity of hFE and small Cob.
· Fast switching speed.
Package Dimensions
unit:mm
2009B
[2SA1209/2SC2911]
8.0 4.0
2.7
1.5 3.0 7.0
11.0
1.6 0.8
0.8
0.6
3.0
0.5
15.5
( ) : 2SA1209
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse)
Symbol
VCBO VCEO VEBO
IC ICP
Collector Dissipation
PC
Junction Temperature Storage Temperature
Tj Tstg
Electrical Characteristics at Ta = 25˚C
Tc=25˚C
1.
2SC2911 - Inchange Semiconductor
·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 160V(Min) ·Good Linearity of hFE ·High Switching Speed ·Complement to .
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2SC2910 |
Sanyo Semicon Device |
PNP/NPN Epitaxial Planar Silicon Transistors |
|
| 2 | 2SC2912 |
Sanyo |
Epitaxial Planar Silicon Transistor |
|
| 3 | 2SC2913 |
INCHANGE |
NPN Transistor |
|
| 4 | 2SC2913 |
Toshiba |
Silicon NPN Transistor |
|
| 5 | 2SC2913 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 6 | 2SC2914 |
INCHANGE |
NPN Transistor |
|
| 7 | 2SC2914 |
Toshiba |
Silicon NPN Transistor |
|
| 8 | 2SC2914 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 9 | 2SC2901 |
NEC |
NPN SILICON TRANSISTOR |
|
| 10 | 2SC2901 |
SEMTECH |
NPN Silicon Epitaxial Planar Transistor |
|
| 11 | 2SC2901 |
Bluecolour |
NPN Silicon Epitaxial Planar Transistor |
|
| 12 | 2SC2901 |
PACO |
NPN Silicon Epitaxial Planar Transistor |
|