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2SC2911 |
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| Part Number | 2SC2911 |
| Manufacturer | Inchange Semiconductor |
| Description | ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 160V(Min) ·Good Linearity of hFE ·High Switching Speed ·Complement to Type 2SA1209 ·Minimum Lot-to-Lot variations for robust device performance and re... |
| Features |
-Emitter Saturation Voltage IC= 50mA; IB= 5mA
ICBO
Collector Cutoff Current
VCB= 80V; IE= 0
IEBO
Emitter Cutoff Current
VEB= 4V; IC= 0
hFE
DC Current Gain
IC= 10mA; VCE= 5V
fT
Current-Gain—Bandwidth Product IC= 10mA; VCE= 10V
COB
Collector Output Capacitance
IE= 0; VCB= 10V; f= 1MHz
hFE Classifications R S T 100-200 140-280 200-400 2SC2911 MIN TYP. MAX UNIT 0.3 V 0.1 μA 0.1 μA 100 400 150 MHz 3 pF Notice： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herein is presented o... |
| Document |
 2SC2911 Data Sheet
PDF 196.12KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2SC2910 |
Sanyo Semicon Device |
PNP/NPN Epitaxial Planar Silicon Transistors |
|
| 2 | 2SC2911 |
Sanyo Semicon Device |
PNP/NPN Epitaxial Planar Silicon Transistors |
|
| 3 | 2SC2912 |
Sanyo |
Epitaxial Planar Silicon Transistor |
|
| 4 | 2SC2913 |
INCHANGE |
NPN Transistor |
|
| 5 | 2SC2913 |
Toshiba |
Silicon NPN Transistor |
|