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www.DataSheet.co.kr Ordering number:ENN778F PNP/NPN Epitaxial Planar Silicon Transistors 2SA1207/2SC2909 High-Voltage Switching AF 60W Predriver Applications Features · Adoption of FBET process. · High breakdown voltage. · Excellent linearity of hFE and small Cob. · Fast switching speed. Package Dimensions unit:mm 2003B [2SA1207/2SC2909] 5.0 4.0 4.0 0.4.
· Adoption of FBET process.
· High breakdown voltage.
· Excellent linearity of hFE and small Cob.
· Fast switching speed.
Package Dimensions
unit:mm 2003B
[2SA1207/2SC2909]
5.0 4.0 4.0
0.45 0.5 0.6 2.0 0.45 0.44 14.0 1 2 3
5.0
( ) : 2SA1207
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Conditions
1.3
1.3
1 : Emitter 2 : Collector 3 : Base SANYO : .
2SC2909 - BLUE ROCKET ELECTRONICS
TO-92 NPN 。Silicon NPN transistor in a TO-92 Plastic Package. / Features ，hFE ，，。 High breakdown voltage, excellen.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2SC2901 |
NEC |
NPN SILICON TRANSISTOR |
|
| 2 | 2SC2901 |
SEMTECH |
NPN Silicon Epitaxial Planar Transistor |
|
| 3 | 2SC2901 |
Bluecolour |
NPN Silicon Epitaxial Planar Transistor |
|
| 4 | 2SC2901 |
PACO |
NPN Silicon Epitaxial Planar Transistor |
|
| 5 | 2SC2902 |
INCHANGE |
NPN Transistor |
|
| 6 | 2SC2902 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 7 | 2SC2904 |
Mitsubishi Electric Semiconductor |
NPN TRANSISTOR |
|
| 8 | 2SC2904 |
ASI |
NPN SILICON RF POWER TRANSISTOR |
|
| 9 | 2SC2904 |
HGSemi |
Silicon NPN POWER TRANSISTOR |
|
| 10 | 2SC2905 |
Mitsubishi Electric Semiconductor |
NPN TRANSISTOR |
|
| 11 | 2SC2908 |
Mospec Semiconductor |
POWER TRANSISTORS |
|
| 12 | 2SC2908 |
SavantIC |
SILICON POWER TRANSISTOR |
|