·With TO-3PN package ·Low collector saturation voltage APPLICATIONS ·For use in power amplifier and switching circuits applications PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-3PN) and symbol DESCRIPTION Absolute maximum ratings(Ta=25 ) SYMBOL VCBO VCEO VEBO IC ICM IB PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter vo.
less otherwise specified PARAMETER Collector-emitter sustaining voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain DC current gain CONDITIONS IC=3.0A ;IB1=0.3A;L=1.0mH IC=3A ;IB=300mA IC=3A ;IB=300mA VCB=100V; IE=0 VCE=100V;VBE=-1.5V VEB=5V; IC=0 IC=0.3A ; VCE=5V IC=3A ; VCE=5V 60 40 MIN 100 1.0 1.5 10 10 10 320 TYP. MAX UNIT V V V µA µA µA SYMBOL VCEO(SUS) VCEsat VBEsat ICBO ICEX IEBO hFE-1 hFE-2 Switching times ton ts tf Turn-on time Storage time Fall time IC=3A; VCC=30V IB1.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2SC2901 |
NEC |
NPN SILICON TRANSISTOR | |
2 | 2SC2901 |
SEMTECH |
NPN Silicon Epitaxial Planar Transistor | |
3 | 2SC2901 |
Bluecolour |
NPN Silicon Epitaxial Planar Transistor | |
4 | 2SC2901 |
PACO |
NPN Silicon Epitaxial Planar Transistor | |
5 | 2SC2902 |
INCHANGE |
NPN Transistor | |
6 | 2SC2902 |
SavantIC |
SILICON POWER TRANSISTOR | |
7 | 2SC2904 |
Mitsubishi Electric Semiconductor |
NPN TRANSISTOR | |
8 | 2SC2904 |
ASI |
NPN SILICON RF POWER TRANSISTOR | |
9 | 2SC2904 |
HGSemi |
Silicon NPN POWER TRANSISTOR | |
10 | 2SC2905 |
Mitsubishi Electric Semiconductor |
NPN TRANSISTOR | |
11 | 2SC2909 |
Sanyo Semicon Device |
PNP/NPN Epitaxial Planar Silicon Transistors | |
12 | 2SC2909 |
BLUE ROCKET ELECTRONICS |
Silicon NPN transistor |