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TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SC1959 Audio Frequency Low Power Amplifier Applications Driver Stage Amplifier Applications Switching Applications 2SC1959 Unit: mm · Excellent hFE linearity: hFE (2) = 25 (min): VCE = 6 V, IC = 400 mA · 1 watt amplifier applications. · Complementary to 2SA562TM. Maximum Ratings (Ta = 25°C) Cha.
hFE (2) VCE = 6 V, IC = 400 mA
(Note)
VCE (sat) VBE fT Cob
IC = 100 mA, IB = 10 mA VCE = 1 V, IC = 100 mA VCE = 6 V, IC = 20 mA VCB = 6 V, IE = 0, f = 1 MHz
Note: hFE (1) classification O: 70~140, Y: 120~240, GR: 200~400 hFE (2) classification O: 25 (min), Y: 40 (min)
JEDEC
TO-92
JEITA
SC-43
TOSHIBA
2-5F1B
Weight: 0.21 g (typ.)
Min Typ. Max Unit ¾ ¾ 0.1 mA ¾ ¾ 0.1 mA
70 ¾ 400
25 ¾ ¾
¾ 0.1 0.25 V ¾ 0.8 1.0 V ¾ 300 ¾ MHz ¾ 7 ¾ pF
1 2003-03-24
2SC1959
2 2003-03-24
2SC1959
RESTRICTIONS ON PRODUCT USE
000707EAA
· TOSHIBA is continually working to improve the quality and reliabilit.
2SC1959 - Micro Commercial Components
MCC Features • omponents 20736 Marilla Street Chatsworth !"# $ % .
2SC1959 - SeCoS
Elektronische Bauelemente 2SC1959 0.5A, 35V NPN Plastic Encapsulated Transistor RoHS Compliant Product A suffix of “-C.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2SC1953 |
Panasonic Semiconductor |
Power Transistors |
|
| 2 | 2SC1953 |
INCHANGE |
NPN Transistor |
|
| 3 | 2SC1953 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 4 | 2SC1955 |
Toshiba |
SILICON NPN TRANSISTOR |
|
| 5 | 2SC1957 |
BLUE ROCKET ELECTRONICS |
SILICON NPN TRANSISTOR |
|
| 6 | 2SC1959-GR |
MCC |
Power Silicon NPN Transistor |
|
| 7 | 2SC1959-O |
MCC |
Power Silicon NPN Transistor |
|
| 8 | 2SC1959-Y |
MCC |
Power Silicon NPN Transistor |
|
| 9 | 2SC1959M |
BLUE ROCKET ELECTRONICS |
Silicon NPN transistor |
|
| 10 | 2SC1904 |
INCHANGE |
NPN Transistor |
|
| 11 | 2SC1904 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 12 | 2SC1905 |
INCHANGE |
NPN Transistor |
|