·With TO-220C package ·High breakdown voltage ·Large collector power dissipation APPLICATIONS ·Color TV horizontal deflection driver PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION Absolute maximum ratings(Ta=25 ) SYMBOL VCBO VCEO VEBO IC ICM PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base v.
tage Collector cut-off current Emitter cut-off current DC current gain Transition frequency Output capacitance Storage time CONDITIONS IC=5mA ; IB=0 IC=100µA ; IE=0 IE=100µA ; IC=0 IC=50mA; IB=5mA VCB=200V ;IE=0 VEB=5V; IC=0 IC=10m A ; VCE=10V IC=10m A ; VCE=30V IE=0 ; VCB=50V; f=1MHz IC=100mA; IB1=10mA; IB2=0 5 40 50 MIN 300 350 7.5 2SC1905 SYMBOL V(BR)CEO V(BR)CBO V(BR)EBO VCEsat ICBO IEBO hFE fT COB tstg TYP. MAX UNIT V V V 1.0 2 2 250 V µA µA MHz 4.5 7.5 pF µs 2 SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC19.
·Collector-Emitter Breakdown Voltage- :V(BR)CEO= 300(V)(Min.) ·100% avalanche tested ·Minimum Lot-to-Lot variations for .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2SC1904 |
INCHANGE |
NPN Transistor | |
2 | 2SC1904 |
SavantIC |
SILICON POWER TRANSISTOR | |
3 | 2SC1906 |
Hitachi Semiconductor |
Silicon NPN Transistor | |
4 | 2SC1906 |
INCHANGE |
NPN Transistor | |
5 | 2SC1907 |
Hitachi Semiconductor |
Silicon NPN Transistor | |
6 | 2SC1907 |
INCHANGE |
NPN Transistor | |
7 | 2SC1907 |
Renesas |
Silicon NPN Transistor | |
8 | 2SC1907 |
SEMTECH |
NPN Silicon Transistor | |
9 | 2SC1908 |
ETC |
NPN Transistor | |
10 | 2SC1913 |
INCHANGE |
NPN Transistor | |
11 | 2SC1913 |
SavantIC |
SILICON POWER TRANSISTOR | |
12 | 2SC1913A |
SavantIC |
SILICON POWER TRANSISTOR |