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2SC1957(3DG1957) NPN /SILICON NPN TRANSISTOR :。 Purpose: Large signal output amplifier. /Absolute maximum ratings(Ta=25℃) Symbol Rating Unit VCBO 75 V VCEO 40 V VEBO 4.0 V IC 1.0 A PC(Ta=25℃) 0.75 W PC(Tc=25℃) 5.0 W Tj 150 ℃ Tstg -55～150 ℃ /Electrical characteristics(Ta=25℃) Symbol Test condition ICBO hFE VCE(sat) fT .
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| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2SC1953 |
Panasonic Semiconductor |
Power Transistors |
|
| 2 | 2SC1953 |
INCHANGE |
NPN Transistor |
|
| 3 | 2SC1953 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 4 | 2SC1955 |
Toshiba |
SILICON NPN TRANSISTOR |
|
| 5 | 2SC1959 |
Toshiba Semiconductor |
PNP Transistor |
|
| 6 | 2SC1959 |
Micro Commercial Components |
Transistor |
|
| 7 | 2SC1959 |
SeCoS |
NPN Plastic Encapsulated Transistor |
|
| 8 | 2SC1959-GR |
MCC |
Power Silicon NPN Transistor |
|
| 9 | 2SC1959-O |
MCC |
Power Silicon NPN Transistor |
|
| 10 | 2SC1959-Y |
MCC |
Power Silicon NPN Transistor |
|
| 11 | 2SC1959M |
BLUE ROCKET ELECTRONICS |
Silicon NPN transistor |
|
| 12 | 2SC1904 |
INCHANGE |
NPN Transistor |
|