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SILICON NPN EPITAXIAL PLANAR TYPE 2SC1955 VHF BAND POWER AMPLIFIER APPLICATIONS. FEATURES • . Output Power : Po=2.8W (Min.) ( f=175MHz, VCC =13.5V, Pi=0.15W) 100% Tested for Load Mismatch Stress at All Phase Angles with 30:1 VSWR @ VC C=13.5V, P =4W, f=175MHz MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter.
•
. Output Power : Po=2.8W (Min.) ( f=175MHz, VCC =13.5V, Pi=0.15W)
100% Tested for Load Mismatch Stress at All Phase Angles with 30:1 VSWR @ VC C=13.5V, P =4W, f=175MHz
MAXIMUM RATINGS (Ta=25°C)
CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation
(Tc=25 °C) Junction Temperature Storage Temperature Range
SYMBOL v CB0 VCEO Vebo ic
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J
T stg
RATING
35 17 3.5 0.8
7.5
175
-65 ~175
UNIT V V V A W
°C °C
Unit in mm
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| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2SC1953 |
Panasonic Semiconductor |
Power Transistors |
|
| 2 | 2SC1953 |
INCHANGE |
NPN Transistor |
|
| 3 | 2SC1953 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 4 | 2SC1957 |
BLUE ROCKET ELECTRONICS |
SILICON NPN TRANSISTOR |
|
| 5 | 2SC1959 |
Toshiba Semiconductor |
PNP Transistor |
|
| 6 | 2SC1959 |
Micro Commercial Components |
Transistor |
|
| 7 | 2SC1959 |
SeCoS |
NPN Plastic Encapsulated Transistor |
|
| 8 | 2SC1959-GR |
MCC |
Power Silicon NPN Transistor |
|
| 9 | 2SC1959-O |
MCC |
Power Silicon NPN Transistor |
|
| 10 | 2SC1959-Y |
MCC |
Power Silicon NPN Transistor |
|
| 11 | 2SC1959M |
BLUE ROCKET ELECTRONICS |
Silicon NPN transistor |
|
| 12 | 2SC1904 |
INCHANGE |
NPN Transistor |
|