2SC1953 - Panasonic Semiconductor

2SC1953 Power Transistors

Power Transistors 2SC1953 Silicon NPN epitaxial planar type For audio system/pre-drive Complementary to 2SA0914 φ 3.16±0.1 8.0+–00..15 Unit: mm 3.2±0.2 3.8±0.3 11.0±0.5 ■ Features 3.05±0.1 • High collector-emitter voltage (Base open) VCEO • Small collector output capacitance (Common base, input open cir- 1.9±0.1 16.0±1.0 cuited) Cob • A complement.

Features

3.05±0.1
• High collector-emitter voltage (Base open) VCEO
• Small collector output capacitance (Common base, input open cir- 1.9±0.1 16.0±1.0 cuited) Cob
• A complementary pair with 2SA0914, is optimum for the pre-driver stage of a 60 W to 100 W output amplifier /
• TO-126B package which requires no insulation plate for installa- tion to the heat sink ce type)
■ Absolute Maximum Ratings Ta = 25°C n d tage. ued Parameter Symbol Rating Unit le s ontin Collector-base voltage (Emitter open) VCBO 150 V a elifecyc disc Collector-emitter voltage (Base open) VCEO 150 V n u ct ped, .