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2SB817E |
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| Part Number | 2SB817E |
| Manufacturer | INCHANGE |
| Description | ··Collector-Emitter Breakdown Voltage- : V(BR)CEO= -140V(Min) ·Good Linearity of hFE ·High Current Capability ·Wide Area of Safe Operation ·Complement to Type 2SD1047E ·Minimum Lot-to-Lot variations f... |
| Features |
MBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
V(BR)CEO Collector-Emitter Breakdown Voltage IC= -30mA ; RBE=∞
-140
V
V(BR)CBO Collector-Base Breakdown Voltage
IC= -5mA; IE= 0
-160
V
V(BR)EBO Emitter-Base Breakdown Voltage
IE= -5mA; IC= 0
-6
V
VCE(sat) Collector-Emitter Saturation Voltage IC= -5.0A; IB= -0.5A
-2.5 V
VBE(on) Base -Emitter On Voltage
IC= -5A ; VCE= -5V
-1.5 V
ICBO
Collector Cutoff Current
VCB= -160V ; IE=0
-100 μA
IEBO
Emitter Cutoff Current
VEB= -4V; IC=0
-100 μA
hFE-1
DC Current Gain
IC= -1A ; VCE= -5V
100
200
hFE-2
DC Current Gain
IC= -5A ; VCE=... |
| Document |
 2SB817E Data Sheet
PDF 191.21KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2SB817 |
Sanyo Semicon Device |
PNP Epitaxial Planar Silicon Transistors |
|
| 2 | 2SB817 |
Inchange Semiconductor |
Silicon PNP Power Transistor |
|
| 3 | 2SB817C |
ON Semiconductor |
Bipolar Transistor |
|
| 4 | 2SB817C |
Sanyo Electric |
PNP Epitaxial Planar Silicon Transistor |
|
| 5 | 2SB817C |
INCHANGE |
PNP Transistor |
|