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2SB817 |
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| Part Number | 2SB817 |
| Manufacturer | Inchange Semiconductor |
| Description | ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -140V(Min) ·Good Linearity of hFE ·High Current Capability ·Wide Area of Safe Operation ·Complement to Type 2SD1047 ·Minimum Lot-to-Lot variations for... |
| Features |
ctor-Emitter Breakdown Voltage IC= -30mA ; RBE=∞
V(BR)CBO Collector-Base Breakdown Voltage
IC= -5mA; IE= 0
V(BR)EBO Emitter-Base Breakdown Voltage
IE= -5mA; IC= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= -5.0A; IB= -0.5A
VBE(on) Base -Emitter On Voltage
IC= -1A ; VCE= -5V
ICBO
Collector Cutoff Current
VCB= -80V ; IE=0
IEBO
Emitter Cutoff Current
VEB= -4V; IC=0
hFE-1
DC Current Gain
IC= -1A ; VCE= -5V
hFE-2
DC Current Gain
IC= -6A ; VCE= -5V
MIN TYP. MAX UNIT
-140
V
-160
V
-6
V
-2.5 V
-1.5 V
-100 μA
-100 μA
60
200
20
hFE-1 Classifications D E 60-1... |
| Document |
 2SB817 Data Sheet
PDF 222.29KB |
| Distributor | Stock | Price | Buy |
|---|
