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2SB816 |
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| Part Number | 2SB816 |
| Manufacturer | INCHANGE |
| Description | ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -120V(Min) ·Good Linearity of hFE ·Wide Area of Safe Operation ·Complement to Type 2SD1046 ·Minimum Lot-to-Lot variations for robust device performanc... |
| Features |
kdown Voltage IC= -30mA ; RBE=∞
V(BR)CBO Collector-Base Breakdown Voltage
IC= -5mA; IE= 0
V(BR)EBO Emitter-Base Breakdown Voltage
IE= -5mA; IC= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= -5.0A; IB= -0.5A
VBE(on) Base -Emitter On Voltage
IC= -1A; VCE= -5V
ICBO
Collector Cutoff Current
VCB= -80V; IE=0
IEBO
Emitter Cutoff Current
VEB= -4V; IC=0
hFE-1
DC Current Gain
IC= -1A; VCE= -5V
hFE-2
DC Current Gain
IC= -5A; VCE= -5V
hFE-1 Classifications D E 60-120 100-200 MIN TYP. MAX UNIT -120 V -150 V -6 V -2.0 V -1.5 V -100 μA -100 μA 60 200 20 NOTICE： I... |
| Document |
 2SB816 Data Sheet
PDF 215.76KB |
| Distributor | Stock | Price | Buy |
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